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Q-NET young researchers

Priyasmita SINHA
E.C. Stoner laboratory, Department of Physics and Astronomy, University of Leeds, Leeds, United Kingdom
Female, Indian


Diplomas, University(ies)
puce Bachelor of Science (H) Physics: University of Delhi, New Delhi, India.

puce Master of Technology: Nanoscience and Nanotechnology, University of Delhi, New Delhi, India and Université Joseph Fourier, Grenoble, France.

Field of research
hjg
Transition metal silicides, spin polarisation

Research experience
1 Master Thesis: Photocurrent Study of III-Nitride Nanostructures
Advisor- Dr. Eva Monroy.
Laboratory SP2M, INAC, CEA, Grenoble, France.

2 Semester Internship: Study of the Radiative Efficiency of III-Nitride Nanostructures
Advisor- Dr. Eva Monroy.
Laboratory SP2M, INAC, CEA, Grenoble, France.

3 Bachelor Thesis: Numerical Modelling of FBG based Athermal Sensors.
Advisors- Dr. Suresh Bhalla and Dr. Rupali Suresh.
Indian Institute of Technology (IIT), New Delhi, India.

Thesis Project :
Topic: Growth and characterisation of highly spin polarised materials

The impetus to study highly spin polarised materials stems from their potential use as spin injectors in spintronic devices. Material systems such as Eu chalcogenides, magnetic Heusler alloys, dilute magnetic semiconductors, mixed valence perovskites have high spin polarisation and have been widely studied. However, they either suffer from low Curie temp., growth defects, dislocations or poor electrical contact to silicon. Transition metal silicides such as FeSi when suitably doped, provides an alternative class of compounds with the promise of high spin polarisation in the system, low defects and easy integration with the current silicon technology in microelectronics industry. The project aims at synthesising high quality thin films of transition metal silicides using molecular beam epitaxy and characterising them with the aim of obtaining evidence of fully spin polarised electron gas in the system.

List of Publications

1. Growth and characterization of polar (0001) and semipolar (11-22) InGaN/GaN quantum dots
A.Das, P.Sinha, Y.Kotsar, P.K.Kandaswamy, G.P.Dimitrakopulos, H.Kehagias, Ph.Komninou, G.Nataf, P. De Mierry, and E.Monroy.
Journal of Crystal Growth 323, 161 (2011)

2. Radiative recombination dynamics of GaN/AlGaN multiple quantum dots in nanowires
R. Songmuang, D. Kalita, P. Sinha, M. den Hertog, R. André, T. Ben, D. González, E. Monroy
Appl. Phys. Lett. 99, 141914 (2011)

3. Strain-induced effects on the magnetic and electronic properties of epitaxial Fe 1− x Co x Si thin films.
P Sinha, NA Porter, CH Marrows. Physical Review B 89 (13), 134426.

4.Preparation of plan-view Co-doped FeSi thin film TEM specimens using FIB.
MB Ward, NA Porter, P Sinha, R Brydson, CH Marrows. Journal of Physics: Conference Series 522 (1), 012044.

Strain-induced effects on the magnetic and electronic properties of epitaxial Fe1-xCoxSi thin films, P. Sinha, N. A. Porter, C. H. Marrows, Physical Review B  89, 134426 (2014).

Giant topological Hall effect in strained Fe0.7Co0.3Si epilayers, Nicholas A. Porter, Priyasmita Sinha, Michael B. Ward, Alexey N. Dobrynin, Rik M. D. Brydson, Timothy R. Charlton, Christian J. Kinane, Michael D. Robertson, Sean Langridge, Christopher H. Marrows, arXiv1312.1722

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